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PZT949 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Numer części PZT949
Szczegółowy opis  Silicon Planar High Current Gain Transistor
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Producent  SECOS [SeCoS Halbleitertechnologie GmbH]
Strona internetowa  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

PZT949 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
PZT949
PNP Transistor
Silicon Planar High Current Gain Transistor
18-Nov-2009 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
1
Base
3
Emitter
Collector
2
4
Top View
1
2
3
4
A
M
B
D
L
K
F
G
H
J
E
C
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
APPLICATION
PZT949 is designed for general purpose switching and amplifier applications.
FEATURES
6Amps continuous current, up to 20Amps pulse current
Very low saturation voltage
MARKING
MAXIMUM RATINGS* (Tamb=25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5.5
A
Collector Current (Pulse)
ICM
-20
A
Total Power Dissipation
PD
3
W
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches
ELECTRICALCHARACTERISTICS (Tamb=25 °C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector - Base Breakdown Voltage
BVCBO
-50
-
-
V
IC = -100
µA , I
E = 0
Collector - Emitter Breakdown Voltage
(With Real Device Limit)
BVCER
-50
-
-
V
IC = -1
µA , RB≦1K
Collector - Emitter Breakdown Voltage
BVCEO
-30
-
-
V
IC = -10mA, IB = 0
Emitter - Base Breakdown Voltage
BVEBO
-6
-
-
V
IE = -100
µA ,I
C = 0
Collector Base Cut - Off Current
ICBO
-
-
-50
nA
VCB = -40V, IE = 0
Collector Base Cut - Off Current
(With Real Device Limit)
ICER
-
-
-50
nA
VCB = -40V ,R≦1K
Emitter Base Cut - Off Current
IEBO
-
-
-10
nA
VEB = -6V, IC = 0
*VCE(sat)1
-
-
-75
mV
IC = -0.5A, IB = -20 mA
*VCE(sat)2
-
-
-140
mV
IC = -1.0A, IB = -20 mA
*VCE(sat)3
-
-
-270
mV
IC = -2.0A, IB = -200 mA
Collector - Emitter Saturation Voltage
*VCE(sat)4
-
-
-440
mV
IC = -5.5A, IB = -500 mA
*VBE(sat)
-
-
-1.25
V
IC = -5.5A, IB = -500 mA
Base - Emitter Voltage
*VBE(on)
-
-
-1.06
V
VCE = -1V, IC = -5.5 A
*hFE1
100
-
-
VCE = -1V, IC = -10 mA
*hFE2
100
-
300
VCE = -1V, IC = -1 A
*hFE3
75
-
-
VCE = -1V, IC = -5 A
DC Current Gain
*hFE4
-
35
-
VCE = -2V, IC = -20 A
Transition Frequency
fT
-
100
-
MHz
VCE = -10V, IC = -100mA, f = 50 MHz
Collector Output Capacitance
COB
-
122
-
pF
VCB = -10 V, IE =0, f = 1 MHz
Turn-on
tON
-
120
-
nS
Switching Time
Turn-off
tOFF
-
130
-
nS
VCC = -10 V, IC = -4 A,
IB1 = -IB2 = -400 mA
*Measured under pulse condition. Pulse width = 300
µs, duty cycle ≦ 2%.
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
6.30
6.70
G
0.02
0.10
B
6.70
7.30
H
1.50
2.00
C
3.30
3.70
J
0.25
0.35
D
1.42
1.90
K
0.85
1.05
E
4.60 REF.
L
2.30 REF.
F
0.60
0.80
M
2.90
3.10
SOT-223
9 4 9
= Date code


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