IRF250SMD datasheet(2/2 Pages) SEME-LAB

Numer części	IRF250SMD

Szczegółowy opis	N.CHANNEL POWER MOSFET

Download	2 Pages

Scroll/Zoom	100%

Producent	SEME-LAB [Seme LAB]

Strona internetowa	http://www.semelab.co.uk

Logo

2 / 2 page

IRF250SMD

Prelim. 7/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS = 0

ID = 1mA

Reference to 25°C

ID = 1mA

VGS = 10V

ID = 14A

VGS = 10V

ID = 22A

VDS = VGS

ID = 250mA

VDS ³ 15V

IDS = 14A

VGS = 0

VDS = 0.8BVDSS

TJ = 125°C

VGS = 20V

VGS = –20V

VGS = 0

VDS = 25V

f = 1MHz

VGS = 10V

ID = 22A

VDS = 0.5BVDSS

ID = 22A

VDS = 0.5BVDSS

VDD = 100V

ID = 22A

RG = 2.35W

IS = 22A

TJ = 25°C

VGS = 0

IF = 22A

TJ = 25°C

di / dt £ 100A/msVDD £ 50V

ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Resistance 1

Gate Threshold Voltage

Forward Transconductance 1

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 1

Gate – Source Charge 1

Gate – Drain (“Miller”) Charge 1

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Pulse Source Current 2

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn–On Time

200

0.29

0.100

0.105

24

9

25

250

100

–100

3500

700

110

55

115

822

30

60

35

190

170

130

22

88

1.9

950

9.0

Negligible

0.8

2.8

V

V/°C

W

V

S(

W

mA

nA

pF

nC

ns

A

V

ns

mC

nH

BVDSS

DBVDSS

DTJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

IS

ISM

VSD

trr

Qrr

ton

LD

LS

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

£ 300ms, d£ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance (from centre of drain pad to die)

Internal Source Inductance (from centre of source pad to end of source bond wire)

PACKAGE CHARACTERISTICS

Podobny numer części - IRF250SMD

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	IRF250	215Kb / 5P	N-CHANNEL POWER MOSFETS
Seme LAB	IRF250	22Kb / 2P	N-CHANNEL POWER MOSFET
Intersil Corporation	IRF250	57Kb / 7P	30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
List of Unclassifed Man...	IRF250	84Kb / 2P	50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IXYS Corporation	IRF250	49Kb / 1P	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

More results

Podobny opis - IRF250SMD

Producent	Numer części	Arkusz danych	Szczegółowy opis
Seme LAB	IRF240SMD	22Kb / 2P	N.CHANNEL POWER MOSFET
ON Semiconductor	NDD03N80Z	131Kb / 8P	N.Channel Power MOSFET August, 2012 ??Rev. 0
	NTMFS5C442NL	83Kb / 6P	Power MOSFET 40 V, 121 A, Single N.Channel June, 2014 ??Rev. 0
	NTD5805N	143Kb / 6P	Power MOSFET 40 V, 51 A, Single N.Channel, DPAK April, 2012 ??Rev. 4
	NTMFS5834NL	114Kb / 6P	Power MOSFET 40 V, 75 A, 9.3 m, Single N.Channel February, 2013 ??Rev. 3
	NVMFS5830NL	111Kb / 6P	Power MOSFET 40 V, 2.3 m, 185 A, Single N.Channel March, 2013 ??Rev. 1
	NTMFS5844NL	111Kb / 6P	Power MOSFET 60 V, 61 A, 12 m, Single N.Channel March, 2013 ??Rev. 4
	NTDV18N06LT4G	169Kb / 8P	Power MOSFET 18 A, 60 V, Logic Level N.Channel DPAK August, 2011 ??Rev. 6
	NVD6824NL	115Kb / 6P	Power MOSFET 100 V, 20 m, 41 A, Single N.Channel July, 2012 ??Rev. 0
	NVD6828NL	113Kb / 6P	Power MOSFET 90 V, 20 m, 41 A, Single N.Channel August, 2012 ??Rev. 0

More results

IRF250SMD Arkusz danych(PDF) 2 Page - Seme LAB

IRF250SMD Arkusz danych(HTML) 2 Page - Seme LAB

Podobny numer części - IRF250SMD

Podobny opis - IRF250SMD

Html Pages

1 2

Arkusz danych Pobierz

Link URL