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2N2219A Arkusz danych(PDF) 2 Page - Semicoa Semiconductor |
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2N2219A Arkusz danych(HTML) 2 Page - Semicoa Semiconductor |
2 / 2 page Data Sheet No. 2N2219A OFF Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 50 V Collector-Base Cutoff Current VCB = 60 V Emitter-Base Cutoff Current VEB = 4 V nA nA V Electrical Characteristics TC = 25 oC unless otherwise specified V V nA V(BR)CBO 75 --- 120 V(BR)CEO 50 --- 65 V(BR)EBO 6.0 --- 7.0 ICES --- 50 3.0 IEBO --- 10 0.5 ICBO1 --- 10 2.0 ON Characteristics Symbol Min Typ Max Unit DC Current Gain IC = 100 µA, VCE = 10 V hFE1 50 180 --- --- IC = 1.0 mA, VCE = 10 V hFE2 75 200 325 --- IC= 10 mA, VCE = 10 V hFE3 100 200 --- --- IC= 150 mA, VCE = 10 V (pulse test) hFE4 100 200 300 --- IC= 500 mA, VCE = 10 V (pulse test) hFE5 30 75 --- --- Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulse test) VCE(sat)1 --- 0.1 0.3 V dc IC = 500 mA, IB = 50 mA (pulse test) VCE(sat)2 --- 0.3 1.0 V dc Base-Emitter Saturation Voltage IC= 150 mA, IB = 15 mA (pulse test) VBE(sat)1 0.6 0.85 1.2 V dc IC = 500 mA, IB = 50 mA (pulse test) VBE(sat)2 --- 1.0 2.0 V dc Switching Characteristics Symbol Min Typ Max Unit Saturated Turn On Switching Time to 90% 16V, 50 ohm input pulse Saturated Turn Off Switching Time to 10% 16V, 50 ohm input pulse ns tOFF --- 175 300 ns tON --- 14 35 Small Signal Characteristics Symbol Min Typ Max Unit Short Circuit Forward Current Transfer Ratio IC = 1 mA, VCE = 10 V, f = 1kHz Open Circuit Output Capacitance VCB = 10 V, IE = 0 V, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz pF COBO --- 4.5 8 pF AC hFE 50 240 --- CIBO --- 17.5 25 --- |
Podobny numer części - 2N2219A |
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Podobny opis - 2N2219A |
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