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2SCR554R Arkusz danych(PDF) 1 Page - Rohm |
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2SCR554R Arkusz danych(HTML) 1 Page - Rohm |
1 / 6 page www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. Midium Power Transistors (80V / 1.5A) 2SCR554R Features Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) 2) High speed switching Structure NPN Silicon epitaxial planar transistor Applications Inner circuit Driver Package TSMT3 Code TL Basic ordering unit (pieces) 3000 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6V DC IC 1.5 A Pulsed ICP 3A PD 0.5 W PD 1.0 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 40 x 40 x 0.7[mm3] ceramic substrate. Packaging specifications Type Parameter Collector current Power dissipation *1 *2 *3 TSMT3 (1) (2) (3) Abbreviated symbol : NH (1) Base (2) Emitter (3) Collector (1) Base (2) Emitter (3) Collector (1) (3) (2) 1/5 2010.06 - Rev.A |
Podobny numer części - 2SCR554R |
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Podobny opis - 2SCR554R |
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