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TS13003CTB0G Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13003CTB0G Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page TS13003 High Voltage NPN Transistor 1/6 Version: G11 TO-92 TO-126 PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 1.5A VCE(SAT) 1V @ IC =0.5A, IB =0.1A Features ● High Voltage ● High Speed Switching Block Diagram Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TS13003CT B0 TO-92 1Kpcs / Bulk TS13003CT B0G TO-92 1Kpcs / Bulk TS13003CT A3 TO-92 2Kpcs / Ammo TS13003CT A3G TO-92 2Kpcs / Ammo TS13003CK B0 TO-126 1Kpcs / Bulk Note: “G” denote for Halogen free Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V Collector Current DC IC 1.5 A Pulse 3 Total Power Dissipation @ Tc= 25 oC TO-92 PTOT 1.5 W TO-126 30 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Ambient Thermal Resistance TO-92 RӨJA 122 oC/W TO-126 90 Pin Definition: 1. Emitter 2. Collector 3. Base |
Podobny numer części - TS13003CTB0G |
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Podobny opis - TS13003CTB0G |
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