N-CHANNEL

POWER MOSFET

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Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

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Document Number 3332

Issue 2

Page 1 of 3

IRF240

•

Low RDS(on) MOSFET Transistor

In A Hermetic Metal Package

•

Designed For Switching, Power Supply,

Motor Control and Amplifier Applications

•

Screening Options Available

C = 25°C unless otherwise stated)

VDS

Drain – Source Voltage

200V

VGS

Gate – Source Voltage

±20V

ID

Continuous Drain Current

Tc = 25°C

18A

ID

Continuous Drain Current

Tc = 100°C

11A

IDM

Pulsed Drain Current

(1)

72A

PD

Total Power Dissipation at

Tc = 25°C

125W

Derate Above 25°C

1.0W/°C

EAS

Single Pulse Avalanche Energy

(2)

12.5mJ

dv/dt

Peak Diode Recovery

(3)

5V/ns

TJ

Junction Temperature Range

-55 to +150°C

Tstg

Storage Temperature Range

-55 to +150°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

1.0

°C/W

INTERNAL PACKAGE INDUCTANCE

Symbols

Parameters

Min.

Typ.

Max.

Units

LD

Internal Drain Inductance

5

LS

Internal Source Inductance

13

nH

Notes

Notes

Notes

Notes

(1)

Repetitive Rating: Pulse width limited by maximum junction temperature

(2)

@VDD = 50V, L ≥ 2.1mH, Peak IL = 18A, Starting TJ = 25°C

(3)

@ ISD ≤ 18A, di/dt ≤ 160A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω

(4)

Pulse Width ≤ 300us, δ ≤ 2%