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8TQ100SPBF Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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8TQ100SPBF Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94266 4 Revision: 15-Mar-10 VS-8TQ080SPbF, VS-8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR 150 155 140 145 160 165 170 180 175 IF(AV) - Average Forward Current (A) 4 26 8 12 10 0 DC See note (1) Square wave (D = 0.50) 80 % rated V R applied 0 1 3 6 5 4 2 7 IF(AV) - Average Forward Current (A) 24 12 68 10 0 DC RMS limit D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 1000 tp - Square Wave Pulse Duration (µs) 100 1000 10 000 10 At any rated load condition and with rated V RRM applied following surge Current monitor High-speed switch D.U.T. R g = 25 Ω + Freewheel diode V d = 25 V L IRFP460 40HFL40S02 |
Podobny numer części - 8TQ100SPBF |
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Podobny opis - 8TQ100SPBF |
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