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2SC2502 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2502 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2502 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 0.7 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICEO Collector cut-off current VCE=320V ;IB=0 100 μA ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=3A ; VCE=2V 15 hFE-2 DC current gain IC=6A ; VCE=2V 8 fT Transition frequency IC=0.6A ; VCE=10V;f=1MHz 10 MHz Switching times ton Turn-on time 1.0 μs tstg Storage time 3.0 μs tf Fall time IC=3A IB1=-IB2=0.6A; RL=10Ω,VCC=30V 0.7 μs |
Podobny numer części - 2SC2502 |
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