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2SD986 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD986 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD985 2SD986 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=1.0A; IB=1.0mA 1.5 V VBEsat Base-emitter saturation voltage IC=1.0A; IB=1.0mA 2.0 V 2SD985 VCB=60V; IE=0 ICBO Collector cut-off current 2SD986 VCB=80V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=0.5A ; VCE=2V 1000 hFE-2 DC current gain IC=1.0A ; VCE=2V 2000 30000 Switching times ton Turn-on time 0.5 μs ts Storage time 1.0 μs tf Fall time IC=1.0A;IB1=-IB2=1.0mA VCC=50V; RL=50Ω 1.0 μs hFE-2 Classifications M L K 2000-5000 4000-10000 8000-30000 |
Podobny numer części - 2SD986 |
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Podobny opis - 2SD986 |
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