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BDX69C Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDX69C Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 20A ·Low Saturation Voltage ·Complement to Type BDX68/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX69 80 BDX69A 100 BDX69B 120 VCBO Collector-Base Voltage BDX69C 140 V BDX69 60 BDX69A 80 BDX69B 100 VCEO Collector-Emitter Voltage BDX69C 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB B Base Current 500 mA PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website:www.iscsemi.cn |
Podobny numer części - BDX69C |
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Podobny opis - BDX69C |
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