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SFT1446 Datasheet(Arkusz danych) 2 Page - Sanyo Semicon Device

Numer części SFT1446
Szczegółowy opis  General-Purpose Switching Device Applications
Pobierz  4 Pages
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Producent  SANYO [Sanyo Semicon Device]
Strona internetowa  http://www.ssdc-jp.com/eng/
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SFT1446
No. A1742-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=10A
7.0
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=10A, VGS=10V
39
51
RDS(on)2
ID=5A, VGS=4.5V
54
76
RDS(on)3
ID=5A, VGS=4V
62
87
Input Capacitance
Ciss
VDS=20V, f=1MHz
750
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
59
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
47
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8.5
ns
Rise Time
tr
See specified Test Circuit.
31
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
60
ns
Fall Time
tf
See specified Test Circuit.
48
ns
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=14A
16
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=14A
3.3
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=10V, ID=14A
3.6
nC
Diode Forward Voltage
VSD
IS=20A, VGS=0V
1.01
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=10A
RL=3Ω
VDD=30V
VOUT
VIN
10V
0V
VIN
SFT1446
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
0
5
10
30
25
20
15
0
IT15540
0.5
1.5
2.0
1.0
2.5
6.0
3.5
4.0
3.0
4.5
5.5
5.0
0
IT15539
0
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.8
1.6
2.0
0
20
6
8
2
18
16
14
12
10
4
VGS=2.5V
3.0V
4.5V
3.5V
4.0V
VDS=10V
Single pulse
Tc=25
°C
Single pulse




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