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TF256 Arkusz danych(PDF) 2 Page - Sanyo Semicon Device

Numer części TF256
Szczegółowy opis  Electret Condenser Microphone Applications
Download  5 Pages
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Producent  SANYO [Sanyo Semicon Device]
Strona internetowa  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

TF256 Arkusz danych(HTML) 2 Page - Sanyo Semicon Device

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TF256
No. A1616-2/5
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Rank
min
typ
max
Gate-to-Drain Breakdown Voltage
V(BR)GDO
IG=--100μA
--20
V
Cutoff Voltage
VGS(off)
VDS=2V, ID=1μA
--0.1
--0.35
--1.0
V
Drain Current
IDSS
VDS=2V, VGS=0V
3
100
180
μA
4
140
280
5
240
450
Forward Transfer Admittance
| yfs |
VDS=2V, VGS=0V, f=1kHz
0.75
1.7
mS
Input Capacitance
Ciss
VDS=2V, VGS=0V, f=1MHz
3.1
pF
Reverse Transfer Capacitance
Crss
VDS=2V, VGS=0V, f=1MHz
1.0
pF
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain
GV
VIN=10mV, f=1kHz
3
1.0
dB
4
2.0
5
3.0
Reduced Voltage Characteristic
ΔG
VV
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V
3
--0.5
--1.0
dB
4
--0.6
--1.3
5
--0.9
--2.0
Frequency Characteristic
ΔGvf
f=1kHz to 110Hz
--1.0
dB
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
3
1.4
%
4
0.9
5
0.35
Output Noise Voltage
VNO
VIN=0V, A curve
--105
--100
dB
Test Circuit
OSC
5pF
+
33μF
2.2kΩ
VCC=2.0V
VCC=1.5V
V
VTVM
THD
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
ID -- VDS
Drain-to-Source Voltage, VDS -- V
ID -- VGS
Gate-to-Source Voltage, VGS -- V
0
0.5
4.0
4.5
5.0
1.0
1.5
2.0
2.5
3.0
3.5
400
300
350
200
250
100
50
150
0
IT15213
--0.10V
--0.05V
--0.15V
--0.20V
--0.25V
--0.30V
VGS=0V
450
350
250
50
150
--0.50
--0.40
--0.30
--0.20
--0.10
0
--0.45
--0.35
--0.25
--0.15
--0.05
500
400
300
200
100
0
IT16271
VDS=2V
150
μA
100
μA


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