BUF410 datasheet(2/2 Pages) ISC

Numer części	BUF410

Szczegółowy opis	isc Silicon NPN Power Transistor

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUF410

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0; L= 25mH

450

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

7

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

B

0.8

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A; IB= 2A

0.5

V

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

B

0.9

V

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 10A; IB= 2A

1.1

V

ICER

Collector Cutoff Current

VCE=VCEV; RBE= 100Ω

VCE=VCEV; RBE= 100Ω;TC=100℃

0.2

1.0

mA

ICEV

Collector Cutoff Current

VCE= VCEV; VBE= -1.5V

VCE= VCEV; VBE= -1.5V;TC=100℃

0.2

1.0

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

mA

Switching Times; Resistive Load

ts

Storage Time

0.8

μs

tf

Fall Time

IC= 5A;IB1= 0.5A;VCC= 50V;

VBB= -5V, RBB= 1.2Ω;L= 0.5mH

Vclamp= 400V

0.05

μs

isc Website：www.iscsemi.cn

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