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MJ10012 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ10012 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors MJ10012 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 400 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A 2.0 V VCEsat-3 Collector-emitter saturation voltage IC=10A; IB=2A 2.5 V VBEsat-1 Base-emitter saturation voltage IC=6A; IB=0.6A 2.5 V VBEsat-2 Base-emitter saturation voltage IC=10A; IB=2A 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=6V 2.8 V ICBO Collector cut-off current VCB=600V; IE=0 1 mA ICEO Collector cut-off current VCE=400V; IB=0 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 40 mA hFE-1 DC current gain IC=3A ; VCE=6V 300 hFE-2 DC current gain IC=6A ; VCE=6V 100 2000 hFE-3 DC current gain IC=10A ; VCE=6V 20 VF Diode forward voltage IF=10A 3.5 V ts Storage time 15 μs tf Fall time IC=6.0A ; VCC=12V IB1=IB2=0.3A 15 μs |
Podobny numer części - MJ10012 |
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Podobny opis - MJ10012 |
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