BAT62-07 datasheet(2/4 Pages) SIEMENS

Numer części	BAT62-07

Szczegółowy opis	Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)

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Producent	SIEMENS [Siemens Semiconductor Group]

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BAT 62-07W

Semiconductor Group

Sep-07-1998

2

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Unit

Values

typ.

max.

min.

DC characteristics

10

µA

-

IR

Reverse current

VR = 40 V

VF

-

0.58

1

V

Forward voltage

IF = 2 mA

AC characteristics

pF

CT

Diode capacitance

VR = 0 V, f = 1 MHz

-

0.6

0.35

-

0.1

Case capacitance

f = 1 MHz

-

CC

225

-

k

Ω

-

R0

Differential resistance

VR = 0 , f = 10 kHz

2

Series inductance chip to ground

Ls

-

nH

-

Semiconductor Group

2

1998-11-01

Podobny numer części - BAT62-07

Producent	Numer części	Arkusz danych	Szczegółowy opis
Infineon Technologies A...	BAT62-07L4	519Kb / 9P	Silicon Schottky Diode Apr-22-2004
	BAT62-07L4	209Kb / 18P	Silicon Schottky Diode 2007-04-19
	BAT62-07L4	1Mb / 19P	Low barrier diode for detectors up to GHz frequencies 2014-02-13
	BAT62-07L4	1Mb / 19P	Silicon Schottky Diode 2014-02-13
	BAT62-07W	519Kb / 9P	Silicon Schottky Diode Apr-22-2004

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Podobny opis - BAT62-07

Producent	Numer części	Arkusz danych	Szczegółowy opis
Siemens Semiconductor G...	BAT62-03W	39Kb / 4P	Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies)
	BAT62-02W	26Kb / 4P	Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
	BAT62	79Kb / 3P	Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.)
Infineon Technologies A...	BAT62	1Mb / 19P	Low barrier diode for detectors up to GHz frequencies 2014-02-13
Infineon Technologies A...	BAT63	889Kb / 9P	Low barrier diode for detectors up to GHz frequencies 2011-06-15
Siemens Semiconductor G...	BAT63	114Kb / 3P	Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Infineon Technologies A...	BAT6203WE6327	1Mb / 18P	Low barrier diode for detectors up to GHz frequencies 2011-06-15
Agilent(Hewlett-Packard...	423B	372Kb / 4P	Low Barrier Schottky Diode Detectors
Siemens Semiconductor G...	BAT63-099R	87Kb / 4P	Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad)
Siemens Semiconductor G...	BAT30	247Kb / 2P	silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz)

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BAT62-07 Arkusz danych(PDF) 2 Page - Siemens Semiconductor Group

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