BC338-16 datasheet(2/6 Pages) SIEMENS

Numer części	BC338-16

Szczegółowy opis	NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

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Producent	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

2

BC 337

BC 338

Maximum Ratings

Parameter

Symbol

BC 337

Unit

Collector-emitter voltage

VCE0

45

V

Collector-base voltage

VCB0

50

Emitter-base voltage

VEB0

Collector current

IC

mA

Base current

IB

mA

Total power dissipation, TC = 66 ˚C

Ptot

mW

Junction temperature

Tj

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient

Rth JA

≤ 200

K/W

Peak collector current

ICM

A

Junction - case1)

Rth JC

≤ 135

Peak base current

IBM

BC 338

25

30

5

800

100

625

150

1

200

Values

1)

Mounted on Al heat sink 15 mm

× 25 mm × 0.5 mm.

Podobny numer części - BC338-16

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Podobny opis - BC338-16

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BC338-16 Arkusz danych(PDF) 2 Page - Siemens Semiconductor Group

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