SI2300 datasheet(3/4 Pages) HTSEMI

Numer części	SI2300

Szczegółowy opis	20 V N-Channel Enhancement Mode MOSFET

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Producent	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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2.5

On-Resistance vs. Drain Current

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

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012345

TC = 125_C

–55

_C

0, 0.5, 1 V

VGS = 5 thru 2.5 V

1.5 V

2 V

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01234567

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02468

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Gate Charge

Qg – Total Gate Charge (nC)

VDS – Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 10 V

ID = 3.6 A

ID – Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

VGS = 4.5 V

ID = 3.6 A

TJ – Junction Temperature (_C)

VGS = 2.5 V

VGS = 4.5 V

25

_C

３

Ｄａｔｅ：２０１１／０５

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20V N-Channel Enhancement Mode MOSFET

SI2300

Podobny numer części - SI2300

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SI2300 Arkusz danych(PDF) 3 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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