8TT100 datasheet(2/8 Pages) VISHAY

Numer części	8TT100

Szczegółowy opis	High Performance Schottky Generation 5.0, 8 A

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Producent	VISHAY [Vishay Siliconix]

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Document Number: 94536

2

Revision: 05-Sep-08

8TT100

Vishay High Power Products

High Performance

Schottky Generation 5.0, 8 A

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

Forward voltage drop

VFM (1)

8 A

TJ = 25 °C

-0.72

V

16 A

-

0.85

8 A

TJ = 125 °C

-0.58

16 A

-

0.69

Reverse leakage current

IRM (1)

TJ = 25 °C

VR = Rated VR

-65

µA

TJ = 125 °C

-

4

mA

Junction capacitance

CT

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

520

-

pF

Series inductance

LS

Measured lead to lead 5 mm from package body

8.0

-

nH

Maximum voltage rate of change

dV/dt

Rated VR

-

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

TJ, TStg

- 55 to 175

°C

Maximum thermal resistance,

junction to case

RthJC

DC operation

2

°C/W

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

0.5

Approximate weight

2g

0.07

oz.

Mounting torque

minimum

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-220AC

8TT100

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