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BTS734L1 Arkusz danych(PDF) 5 Page - Siemens Semiconductor Group |
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BTS734L1 Arkusz danych(HTML) 5 Page - Siemens Semiconductor Group |
5 / 16 page BTS 734 L1 Parameter and Conditions, each of the two channels Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 Leakage output current (included in Ibb(off)) VIN = 0 IL(off) -- -- 20 µA Operating current 10), VIN = 5V, Tj =-40...+150°C IGND = IGND1 + IGND2, one channel on: two channels on: IGND -- -- 1.8 3.6 4 8 mA Protection Functions Initial peak short circuit current limit, (see timing diagrams, page 13) each channel, Tj =-40°C: Tj =25°C: Tj =+150°C: IL(SCp) 47 35 21 55 44 26 66 54 34 A two parallel channels twice the current of one channel Repetitive short circuit current limit, Tj = Tjt each channel two parallel channels (see timing diagrams, page 13) IL(SCr) -- -- 19 19 -- -- A Initial short circuit shutdown time Tj,start =-40°C: Tj,start = 25°C: (see page 11 and timing diagrams on page 13) toff(SC) -- -- 3 2.5 -- -- ms Output clamp (inductive load switch off)11) at VON(CL) = Vbb - VOUT VON(CL) 41 47 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆T jt -- 10 -- K Reverse Battery Reverse battery voltage 12) - Vbb -- -- 32 V Drain-source diode voltage (Vout > Vbb) IL = - 4.8 A, Tj = +150°C - VON -- 600 -- mV 10 ) Add IST, if IST > 0 11 ) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) 12 ) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8). |
Podobny numer części - BTS734L1 |
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Podobny opis - BTS734L1 |
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