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BUZ103S Arkusz danych(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ103S Arkusz danych(HTML) 3 Page - Siemens Semiconductor Group |
3 / 8 page Semiconductor Group 3 30/Jan/1998 BUZ 103 S SPP31N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 22 A gfs 10 - - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 720 900 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 230 300 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 125 160 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω td(on) - 10 15 ns Rise time VDD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω tr - 25 40 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω td(off) - 25 40 Fall time VDD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω tf - 20 30 Gate charge at threshold VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V Qg(th) - 0.7 1 nC Gate charge at 7.0 V VDD = 40 V, ID = 31 A, VGS =0 to 7 V Qg(7) - 20 30 Gate charge total VDD = 40 V, ID = 31 A, VGS =0 to 10 V Qg(total) - 25 40 Gate plateau voltage VDD = 40 V, ID = 31 A V(plateau) - 5.9 - V |
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