BUZ104 datasheet(3/9 Pages) SIEMENS

Numer części	BUZ104

Szczegółowy opis	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

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Producent	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

3

07/96

BUZ 104

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 12.5 A

gfs

4

7.5

-

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

-

350

470

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

-

140

210

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

-

60

90

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

td(on)

-

10

15

ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

tr

-

30

45

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

td(off)

-

50

65

Fall time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

tf

-

40

55

Podobny numer części - BUZ104

Producent	Numer części	Arkusz danych	Szczegółowy opis
Inchange Semiconductor ...	BUZ104	65Kb / 2P	Ultra low on-resistance
Siemens Semiconductor G...	BUZ104L	209Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)
	BUZ104S	128Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature)
	BUZ104SL	126Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175째C operating temperature)
	BUZ104SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

More results

Podobny opis - BUZ104

Producent	Numer części	Arkusz danych	Szczegółowy opis
Siemens Semiconductor G...	BUZ101	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ103	186Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ342	214Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance)
	BUZ104L	209Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)
	BUZ102	183Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ100	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ101S	69Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ103AL	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ102AL	182Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ101SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

More results

BUZ104 Arkusz danych(PDF) 3 Page - Siemens Semiconductor Group

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