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BUZ21L Arkusz danych(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ21L Arkusz danych(HTML) 3 Page - Siemens Semiconductor Group |
3 / 8 page Semiconductor Group 3 01/97 BUZ 21 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 10.5 A gfs 8 14 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 1200 1500 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 320 580 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 160 260 Turn-on delay time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω td(on) - 25 40 ns Rise time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω tr - 110 170 Turn-off delay time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω td(off) - 210 270 Fall time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω tf - 100 130 |
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