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N0413N-ZK-E1-AY Arkusz danych(PDF) 1 Page - Renesas Technology Corp |
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N0413N-ZK-E1-AY Arkusz danych(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page R07DS0555EJ0100 Rev.1.00 Page 1 of 6 Nov 07, 2011 Preliminary Data Sheet N0413N N-CHANNEL MOSFET FOR SWITCHING Description The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 3.3 m Ω MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. Lead Plating Packing Package N0413N-ZK-E1-AY ∗ 1 N0413N-ZK-E2-AY ∗ 1 Pure Sn (Tin) Tape 800 p/reel TO-263 1.39 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25 °C, all terminals are connected) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±100 A Drain Current (pulse) ∗ 1 ID(pulse) ±400 A Total Power Dissipation (TC = 25 °C) PT1 119 W Total Power Dissipation (TA = 25 °C) PT2 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current ∗ 2 IAS 55 A Single Avalanche Energy ∗ 2 EAS 300 mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance Rth(ch-C) 1.05 °C/W Channel to Ambient Thermal Resistance ∗ 2 Rth(ch-A) 83.3 °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 → 0 V, L = 100 μH R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 |
Podobny numer części - N0413N-ZK-E1-AY |
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Podobny opis - N0413N-ZK-E1-AY |
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