AM2340NE datasheet(1/3 Pages) ANALOGPOWER

Numer części	AM2340NE

Szczegółowy opis	N-Channel 40-V (D-S) MOSFET

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Producent	ANALOGPOWER [Analog Power]

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AM2340NE

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM2340NE_A

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

N-Channel 40-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SOT-23 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol

Limit

Units

VDS

40

VGS

±20

TA=25

oC5.2

TA=70

oC4.1

IDM

30

IS

1.6

A

TA=25

oC1.3

TA=70

oC0.8

TJ, Tstg -55 to 150

oC

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Symbol

Maximum

Units

t <= 5 sec

100

oC/W

Steady-State

166

oC/W

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

RθJA

D

S

G

VDS (V)

rDS(on) m(Ω)ID (A)

43 @ VGS = 10V

5.2

50 @ VGS = 4.5V

4.2

55 @ VGS = 3.5V

4.0

PRODUCT SUMMARY

40

ESD Protected

2000V

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Vishay Siliconix	SI2318DS	79Kb / 4P	N-Channel 40-V (D-S) MOSFET Rev. A, 18-Aug-03
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Vishay Siliconix	SI2318CDS	236Kb / 10P	N-Channel 40 V (D-S) MOSFET Rev. A, 04-Oct-10
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