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PZT2222AL-AA3-R Arkusz danych(PDF) 2 Page - Unisonic Technologies |
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PZT2222AL-AA3-R Arkusz danych(HTML) 2 Page - Unisonic Technologies |
2 / 6 page PZT2222A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R207-001.D ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 0.6 A Total Device Dissipation PC 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL DATA (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 125 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 75 V Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 40 V Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V Collector Cut-off Current ICEO VCE=60V, VEB(OFF)=3.0V 10 nA Collector Cut-Off Current ICBO VCB=60V, IE=0 0.01 μA VCB=60V,IE=0, TA=150°C 10 Emitter Cut-Off Current IEBO VEB=3.0V, IC=0 10 nA Base Cut-Off Current IBL VCE=60V, VEB(OFF)=3.0V 20 nA ON CHARACTERISTICS DC Current Gain hFE IC=0.1mA, VCE=10V 35 IC=1.0mA, VCE=10V 50 IC=10mA, VCE=10V 75 IC=10mA, VCE=10V, TA=-55°C 35 IC=150mA, VCE=10V (Note) 100 IC=150mA, VCE=1.0V (Note) 50 300 IC=500mA, VCE=10V (Note) 40 Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=150mA, IB=15mA 0.3 V IC=500mA, IB=50mA 1.0 Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 V IC=500mA, IB=50mA 2.0 SMALL SIGNAL CHARACTERISTICS Transition Frequency fT IC=20mA, VCE=20V, f=100MHz 300 MHz Output Capacitance COBO VCB=10V, IE=0, f=100kHz 8.0 pF Input Capacitance CIBO VEB=0.5V, IC=0, f=100kHz 25 pF Collector Base Time Constant rB'CC IC=20mA, VCB=20V, f=31.8MHz 150 pS Noise Figure NF IC=100μA, VCE=10V, RS=1.0kΩ, f=1.0kHz 4.0 dB Real Part of Common-Emitter High Frequency Input Impedance RE(HJE) IC=20mA, VCB=20V, f=300MHz 60 Ω |
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