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Z0109NN0 Arkusz danych(PDF) 8 Page - NXP Semiconductors |
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Z0109NN0 Arkusz danych(HTML) 8 Page - NXP Semiconductors |
8 / 17 page Z0109NN0 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 10 May 2011 8 of 17 NXP Semiconductors Z0109NN0 4Q Triac 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD =12V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 9 0.4 - 10 mA VD =12V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 9 0.4 - 10 mA VD =12V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 9 0.4 - 10 mA VD =12V; IT = 0.1 A; T2- G+; Tj = 25 °C; see Figure 9 0.4 - 10 mA IL latching current VD =12V; IG = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 10 --15 mA VD =12V; IG = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 10 --30 mA VD =12V; IG = 0.1 A; T2- G-; Tj = 25 °C; see Figure 10 --15 mA VD =12V; IG = 0.1 A; T2- G+; Tj = 25 °C; see Figure 10 --15 mA IH holding current VD =12V; Tj = 25 °C; see Figure 11 --10 mA VT on-state voltage IT = 1.4 A; Tj =25 °C; see Figure 12 -1.3 1.6 V VGT gate trigger voltage VD =12V; IT = 0.1 A; Tj =25°C; see Figure 13 --1.3 V VD =800 V; IT = 0.1 A; Tj = 125 °C; see Figure 13 0.2 --V ID off-state current VD =800 V; Tj = 125 °C --0.5 mA Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 110 °C; gate open circuit; exponential waveform; see Figure 14 120 - - V/µs dVcom/dt rate of change of commutating voltage VD =400 V; Tj =110 °C; dIcom/dt = 0.44 A/ms; gate open circuit 2 --V/µs |
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