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N-30ETU06 Arkusz danych(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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N-30ETU06 Arkusz danych(HTML) 2 Page - Nell Semiconductor Co., Ltd |
2 / 6 page THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s Thermal resistance, junction to case RthJC - K/W Thermal resistance, junction to ambient RthJA Typical socket mount Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and gerased Weight - - Mounting torque 6 (5) - 12 (10) kgf . cm (lbf . in) Marking device Case style TO-220AC SEMICONDUCTOR RoHS RoHS Nell High Power Products g - 2 °C 300 - - 80 - - - 0.4 - oz. - 0.07 ºC unless otherwise specified) = 25 PARAMETER SYMBOL TEST CONDITIONS V - = 60 A IF - - µA - - 600 1.10 10 - - - pF 35 ELECTRICAL SPECIFICATIONS (TJ Cathode to anode breakdown voltage VBR = 100 µA IR Maximum forward voltage = 30 A IF = 30 A, T I = 125 ºC F J Maximum reverse leakage current IRM Junction capacitance 1.40 1.80 - - ºC unless otherwise specified) = 25 PARAMETER SYMBOL TEST CONDITIONS ns - - 30 175 DYNAMIC RECOVERY CHARACTERISTICS PERLEG (TJ Reverse recovery time IF = 1.0 A, dI /dt = -100 A/µs, V =30 V, T = 25°C F R J 23 - A - 6 3 - nC - 485 55 - Peak recovery current Reverse recovery charge trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 T = 125 ºC J T = 125 ºC J T = 125 ºC J T = 25 ºC J T = 25 ºC J T = 25 ºC J I = 30A F dI /dt = -200 A/µs F V = 400 V R - VFM CT V = 200V R T = 150°C, V = V rated J R R V = V rated R R I = 0.5A, I = 1.0A, I = 250mA (RG#1 CKT) F R RR 30 - 1.70 UNITS MAX. TYP. MIN. UNITS MAX. TYP. MIN. A/µs - 160 260 - dl /dt2 (rec)M T = 125 ºC J T = 25 ºC J - - nH 8 Series inductance LS 1000 - - Measured lead to lead 5 mm from package body Peak rate of fall of recovery dl /dt1 (rec)M 125 6.0 60 35 10 600 180 1.35 2.0 N-30ETU06 - current during tb 0.8 0.5 Case style TO-220AB 30ETU06 30ATU06 www.nellsemi.com Page 2 of 6 |
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