FDD3672_11 datasheet(5/6 Pages) FAIRCHILD

Numer części	FDD3672

Szczegółowy opis	N-Channel UltraFET Trench MOSFET 100V, 44A, 28m廓

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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5 / 6 page

FDD3672_F085 Rev. C

5

www.fairchildsemi.com

Figure 5. Forward Bias Safe Operating Area

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

Figure 9. Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Typical Characteristics

110

100

300

0.1

1

10

100

200

100us

1ms

10ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

TC = 25

o

C

DC

0.001

0.01

0.1

1

10

100

1

10

100

STARTING TJ = 150

oC

STARTING TJ = 25

oC

tAV, TIME IN AVALANCHE (ms)

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R

≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

0

20

40

60

80

TJ = -55

oC

TJ = 25

oC

TJ = 175

oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

VDD = 5V

VGS, GATE TO SOURCE VOLTAGE (V)

01

23

45

0

20

40

60

80

VGS = 5V

VGS = 6V

VGS = 7V

VGS = 8V

VGS = 10V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

56

7

8

9

10

0

20

40

60

80

100

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25

oC

TJ = 175

oC

ID = 44A

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

-80

-40

0

40

80

120

160

200

0.6

1.0

1.5

2.0

2.5

3.0

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

ID = 44A

VGS = 10V

TJ, JUNCTION TEMPERATURE(

oC)

Podobny numer części - FDD3672_11

Producent	Numer części	Arkusz danych	Szczegółowy opis
Fairchild Semiconductor	FDD3672	431Kb / 7P	P-Channel PowerTrench짰 MOSFET -40V, -14A, 64m廓

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Podobny opis - FDD3672_11

Producent	Numer części	Arkusz danych	Szczegółowy opis
Fairchild Semiconductor	FDD3672	233Kb / 11P	N-Channel UltraFET Trench MOSFET 100V, 44A, 28m?
	FDB3672_F085	506Kb / 11P	N-Channel PowerTrench짰 MOSFET 100V, 44A, 28m廓
	FDB3672	506Kb / 11P	N-Channel PowerTrench짰 MOSFET 100V, 44A, 28m廓
	HUF75637P3	201Kb / 10P	44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
Intersil Corporation	HUF75637P3	332Kb / 9P	44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
Fairchild Semiconductor	HUFA75637P3	202Kb / 10P	44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
MagnaChip Semiconductor...	MDD1902	904Kb / 6P	Single N-channel Trench MOSFET 100V, 40A, 28m(ohm)
Fairchild Semiconductor	FDMS3672	252Kb / 7P	N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm
	FDMC2674	228Kb / 7P	N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m廓
	FDA2712	353Kb / 8P	N-Channel UltraFET Trench MOSFET 250V, 64A, 34m廓

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