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FDZ661PZ Arkusz danych(PDF) 8 Page - Fairchild Semiconductor

Numer części FDZ661PZ
Szczegółowy opis  New Products, Tips and Tools for Power and Mobile Applications
Download  12 Pages
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ661PZ Arkusz danych(HTML) 8 Page - Fairchild Semiconductor

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High-Voltage Blocking Capability
Without Sacrificing Performance
The challenge of improving energy efficiency with heat and thermal regulation, while
keepingcomponentcountlow,justbecameeasier.Fairchild’sFGAxxN65SMDseries
of 650V IGBTs for photovoltaic inverter applications addresses this need—
without sacrificing performance.
Fairchild’s Field Stop IGBT technology enables designers to develop a highly
reliable system design with higher input voltage while offering optimum
performance where low conduction and switching losses are essential.
This functionality means designs benefit from high current handling capability,
positive temperature coefficient, tight parameter distribution and a wide safe
operating area.
Advantages
• Positivetemperature
co-efficientforeasyparallel
operation
• High-currentcapability
enableshighpower
DC-ACconversion
• Maximumjunction
temperature:T
J=175ºC
• Lowsaturationvoltage:
V
CE(sat)=1.9V(typical)@
I
C=40A/60Aratedcurrent
• Fastswitchingspeed
allowsthesystemto
maintainhighefficiency
• Lowconductionand
switchingloss
• WideSOA(SafeOperating
Area)—allowsforhigher
powerdissipation
• Tightparameterdistribution
Applications
• SolarPVinverter
•Microconvertersystems
•Centralinvertersystems
•Microinvertersystems
• UPS,SMPS,welderand
PFCapplications
For more information, please visit:
fairchildsemi.com/pf/FG/FGA40N65SMD.html
fairchildsemi.com/pf/FG/FGA60N65SMD.html
fairchildsemi.com/applications/
solar-inverter/index.html
fairchildsemi.com/onlineseminars/
Q1
Q2
Q3
Grid
Q4
CEC (California Energy Commission) Weighted
Efficiency–Tested in PV Inverter System
Application Diagram of Central MPPT System
(Full-bridge Inverter)
650V iGBTs
40/60/80V PowerTrench® MOSFeTs
98.00
97.00
96.00
95.00
94.00
93.00
92.00
91.00
300
600
900
1500
2250
3000
40N65SMD
40N60SMD
Competitor A
Competitor B
P
OUT (Output Power) (W)
Product
Number
BV
CeS
(V)
i
C @
100°C
(A)
V
ce(sat)
Typ
@ 25°C,
15V (V)
e
OFF
Typ
@
25°C
(mJ)
P
D @
25°C
(W)
V
F Typ
@
25°C
(V)
t
rr Typ
@
25°C
(ns)
T
J
(max)
(°C)
Package
FGA40N65SMD
650
40
1.9
0.26
349
2.1@
20A
42 @
20A
175
TO-3PN
FGA60N65SMD
650
60
1.9
0.45
600
2.1@
30A
47 @
30A
175
TO-3PN


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