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SN74SSQEB32882ZALR Arkusz danych(PDF) 2 Page - Texas Instruments |
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SN74SSQEB32882ZALR Arkusz danych(HTML) 2 Page - Texas Instruments |
2 / 9 page SN74SSQEB32882 SCAS896-PUB – JUNE 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Table 1. ORDERING INFORMATION ORDERABLE (2) TOP-SIDE TCASE(max) PACKAGE(1) PART NUMBER MARKING See Table 4 176ZAL Tape and Reel SN74SSQEB32882ZALR EB32882A (1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. (2) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. APPLICATION INFORMATION Vendor Specific SPD Content SPD EEPROM on DDR3 RDIMMs has 3 vendor specific bytes for vendor and revision ID. This information can be sued by the system BIOS. The following table showsthe correct values for SN74SSQEB32882. Table 2. Vendor specific SPD content for SN74SSQEB32882 Byte Value Description 65 0x80 Vendor ID, part 1 66 0x97 Vendor ID, part 2 67 0x33 Revision ID Application Reports For additional Information on SN74SSQEB32882 DDR3 Register please review the following application reports: - DDR3 Register CMR programming - DDR3 RDIMM SPD settings - Yn phase shift on SN74SSQEA32882 - DDR3 Register IBT Measurement 2 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated |
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Podobny opis - SN74SSQEB32882ZALR |
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