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TYN20X-800T Arkusz danych(PDF) 7 Page - NXP Semiconductors |
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TYN20X-800T Arkusz danych(HTML) 7 Page - NXP Semiconductors |
7 / 12 page NXP Semiconductors TYN20X-800T SCR TYN20X-800T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 23 July 2012 7 / 12 Symbol Parameter Conditions Min Typ Max Unit ID off-state current VD = 800 V; Tj = 150 °C - 0.2 1 mA IR reverse current Tj = 150 °C; VR = 800 V - 0.2 1 mA Dynamic charateristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 300 - - V/µs Tj (°C) -50 150 100 0 50 003aaj867 1 2 3 0 IGT IGT(25°C) Fig. 7. Normalized gate trigger current as a function of junction temperature Tj (°C) -50 150 100 0 50 003aaj868 1 2 3 0 IL IL(25°C) Fig. 8. Normalized latching current as a function of junction temperature Tj (°C) -50 150 100 0 50 003aaj869 1 2 3 IH IH(25°C) 0 Fig. 9. Normalized holding current as a function of junction temperature 003aaj878 0 10 20 30 40 0 1 2 VT(V) IT (A) (1) (2) (3) Vo = 1.0485 V; Rs = 0.0133 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage |
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