G110 datasheet(1/3 Pages) TAYCHIPST

Numer części	G110

Szczegółowy opis	Silicon Z?밆iodes

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Producent	TAYCHIPST [Shenzhen Taychipst Electronic Co., Ltd]

Strona internetowa	http://www.taychipst.com

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10V-270V 3.0A

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Web Site: www.taychipst.com

FEATURES

E-mail: sales@taychipst.com

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MECHANICAL DATA

•

High reliability

Voltage range 10 V to 270 V

Fits onto 5 mm SMD footpads

Wave and reflow solderable

Glass passivated junction

Case:JEDEC DO-214AC(SMA)

Terminals: Solderable per MIL-

STD-202,Method 208

Polarity: Color band denotes cathods end

Mounting position: any

Weight: 0.002 ounces, 0.064 grams

•

BZG03C Series

Silicon Z–Diodes

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

BZG03C-series

BZG03C-series-TR

1500 (7" reel)

BZG03C-series

BZG03C-series-TR3

6000 (13" reel)

6000/box

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Power dissipation

RthJA < 25 K/W, Tamb = 100 °C

Ptot

3000

mW

RthJA < 100 K/W, Tamb = 50 °C

Ptot

1250

mW

Non repetitive peak surge power

dissipation

tp = 100 μs sq.pulse, Tj = 25 °C

pior to surge

PZSM

600

W

Junction to lead

RthJL

25

K/W

Junction to ambient air

Mounted on epoxy-glass hard

tissue, fig. 1b

RthJA

150

K/W

Mounted on epoxy-glass hard tissue, fig. 1b

RthJA

125

K/W

Mounted on Al-oxid-ceramic

(Al2O3), fig. 1b

RthJA

100

K/W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

- 65 to + 150

°C

Forward voltage (max.)

IF = 0.5 A

VF

1.2

V

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G110 Arkusz danych(PDF) 1 Page - Shenzhen Taychipst Electronic Co., Ltd

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