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ST2319SRG Arkusz danych(PDF) 3 Page - Stanson Technology |
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ST2319SRG Arkusz danych(HTML) 3 Page - Stanson Technology |
3 / 8 page ST2319SRG P Channel Enhancement Mode MOSFET -3.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2319SRG 2009. Rev.1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-10uA -40 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.8 -1.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-36V,VGS=0V -1 uA VDS=-36V,VGS=0V TJ=85℃ -5 On-State Drain Current ID(on) VDS≦-5V,VGS=-4.5V -3.5 A Drain-source On-Resistance RDS(on) VGS=-10V,ID=-3.0A VGS=-4.5V,ID=-2.8A 0.075 0.105 Ω Forward Transconductance gfs VDS=-15V,ID=-3.0A 13 S Diode Forward Voltage VSD IS=-1.3A,VGS=0V -1.0 V Dynamic Total Gate Charge Qg VDS=-15V VGS=-10V ID≡-3.0A 9 12 nC Gate-Source Charge Qgs 1.5 Gate-Drain Charge Qgd 2.0 Input Capacitance Ciss VDS=-15V VGS=0V F=1MHz 500 pF Output Capacitance Coss 95 Reverse Transfer Capacitance Crss 50 Turn-On Time td(on) tr VDD=-15V RL=15Ω ID=-1.0A VGEN=-10V RG=6Ω 8 20 nS 10 20 Turn-Off Time td(off) tf 30 35 15 20 |
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