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ST2319SRG Arkusz danych(PDF) 3 Page - Stanson Technology

Numer części ST2319SRG
Szczegółowy opis  ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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Producent  STANSON [Stanson Technology]
Strona internetowa  http://www.stansontech.com
Logo STANSON - Stanson Technology

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ST2319SRG
P Channel Enhancement Mode MOSFET
-3.5A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2319SRG 2009. Rev.1
ELECTRICAL CHARACTERISTICS
( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=-10uA
-40
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA
-0.8
-1.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage Drain
Current
IDSS
VDS=-36V,VGS=0V
-1
uA
VDS=-36V,VGS=0V
TJ=85℃
-5
On-State Drain Current
ID(on)
VDS≦-5V,VGS=-4.5V
-3.5
A
Drain-source On-Resistance
RDS(on)
VGS=-10V,ID=-3.0A
VGS=-4.5V,ID=-2.8A
0.075
0.105
Ω
Forward Transconductance
gfs
VDS=-15V,ID=-3.0A
13
S
Diode Forward Voltage
VSD
IS=-1.3A,VGS=0V
-1.0
V
Dynamic
Total Gate Charge
Qg
VDS=-15V
VGS=-10V
ID≡-3.0A
9
12
nC
Gate-Source Charge
Qgs
1.5
Gate-Drain Charge
Qgd
2.0
Input Capacitance
Ciss
VDS=-15V
VGS=0V
F=1MHz
500
pF
Output Capacitance
Coss
95
Reverse Transfer
Capacitance
Crss
50
Turn-On Time
td(on)
tr
VDD=-15V
RL=15Ω
ID=-1.0A
VGEN=-10V
RG=6Ω
8
20
nS
10
20
Turn-Off Time
td(off)
tf
30
35
15
20


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