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2N2222AHR Arkusz danych(PDF) 10 Page - STMicroelectronics |
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2N2222AHR Arkusz danych(HTML) 10 Page - STMicroelectronics |
10 / 18 page Radiation hardness assurance 2N2222AHR 10/18 Doc ID 16558 Rev 9 ST radiation guarantee on ESCC devices Each product lot is tested according to the ESCC Basic Specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. The radiation test is made on biased parts, at Vces = 80% V(BR)ceo. They are irradiated between 36 and 360 rad (Si)/h. The key parameters listed in table 7 of each samples are tested when irradiation reaches 30, 50, 70 and 100 krad (Si) after a 24 hour annealing at room temperature and then after a 168 hours annealing at 100°C. If all tested parameters stay within their pre-radiation specification at all measurements steps, parts compliant with the applicable ESCC generic and/or detailed specification are guaranteed by ST at 100 krad (Si). Table 7. ESCC post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 60 V - 10 nA IEBO Emitter cut-off current (IC = 0) VEB = 3 V - 10 nA V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 100 µA 75 - V V(BR)CEO (1) 1. Pulsed duration = 300 µs, duty cycle ≤ 2 % Collector-emitter breakdown voltage (IB = 0) IC = 30 mA 40 - V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 µA 6 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IB = 15 mA - 0.3 V VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA 1.2 V hFE (1) DC current gain IC = 0.1 mA VCE = 10 V IC = 10 mA VCE = 10 V IC = 150 mA VCE = 10 V IC = 500 mA VCE = 10 V 35 75 100 40 - 300 |
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