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2N2222AHR Arkusz danych(PDF) 10 Page - STMicroelectronics

Numer części 2N2222AHR
Szczegółowy opis  Hi-Rel 40 V - 0.8 A NPN transistor
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Radiation hardness assurance
2N2222AHR
10/18
Doc ID 16558 Rev 9
ST radiation guarantee on ESCC devices
Each product lot is tested according to the ESCC Basic Specification 22900, with a
minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as
unirradiated sample, all of them being fully compliant with the applicable ESCC generic
and/or detailed specification.
The radiation test is made on biased parts, at Vces = 80% V(BR)ceo. They are irradiated
between 36 and 360 rad (Si)/h. The key parameters listed in table 7 of each samples are
tested when irradiation reaches 30, 50, 70 and 100 krad (Si) after a 24 hour annealing at
room temperature and then after a 168 hours annealing at 100°C.
If all tested parameters stay within their pre-radiation specification at all measurements
steps, parts compliant with the applicable ESCC generic and/or detailed specification are
guaranteed by ST at 100 krad (Si).
Table 7.
ESCC post radiation electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off
current (IE = 0)
VCB = 60 V
-
10
nA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 3 V
-
10
nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 100 µA
75
-
V
V(BR)CEO
(1)
1.
Pulsed duration = 300 µs, duty cycle
≤ 2 %
Collector-emitter
breakdown voltage
(IB = 0)
IC = 30 mA
40
-
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 100 µA
6
-
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 150 mA
IB = 15 mA
-
0.3
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = 150 mA
IB = 15 mA
1.2
V
hFE
(1)
DC current gain
IC = 0.1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
35
75
100
40
-
300


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