FDC8602 datasheet(4/7 Pages) FAIRCHILD

Numer części	FDC8602

Szczegółowy opis	Dual N-Channel PowerTrench짰 MOSFET 100 V, 1.2 A, 350 m廓

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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FDC8602 Rev.C

Figure 7.

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

2

4

6

8

10

ID = 1.2 A

VDD = 75 V

VDD = 25 V

Qg, GATE CHARGE (nC)

VDD = 50 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

100

0.1

1

10

500

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

10

0.1

1

2

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

UnclampedInductive

Switching Capability

Figure 10.

0.1

1

10

100

400

0.005

0.01

0.1

1

10

100 us

1 ms

1 s

10 ms

DC

10 s

100 ms

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RθJA = 180

oC/W

TA = 25

oC

Forward Bias Safe

Operating Area

Figure 11. Single Pulse Maximum Power Dissipation

10

-4

10

-3

10

-2

10

-1

110

100

1000

0.5

1

10

100

V

GS = 10 V

SINGLE PULSE

RθJA = 180

o

C/W

T

A = 25

o

C

t, PULSE WIDTH (sec)

Typical Characteristics T

J = 25 °C unless otherwise noted

Podobny numer części - FDC8602

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Fairchild Semiconductor	FDC8601	249Kb / 7P	N-Channel Shielded Gate PowerTrench짰 MOSFET

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Podobny opis - FDC8602

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ON Semiconductor	FDP085N10A	3Mb / 10P	N-Channel PowerTrench짰 MOSFET 100 V, 96 A, 8.5 m廓 November-2017, Rev. 3
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