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FDC8602 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDC8602 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  ©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDC8602 Rev.C Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C 73 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA2 3.2 4 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -8 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 1.2 A 285 350 m Ω VGS = 6 V, ID = 0.9 A 409 575 VGS = 10 V, ID = 1.2 A, TJ = 125 °C 489 600 gFS Forward Transconductance VDS = 10 V, ID = 1.2 A1.3 S Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1MHz 53 70 pF Coss Output Capacitance 17 25 pF Crss Reverse Transfer Capacitance 0.8 5 pF Rg Gate Resistance 1.6 Ω td(on) Turn-On Delay Time VDD = 50 V, ID = 1.2 A, VGS = 10 V, RGEN = 6 Ω 3.5 10 ns tr Rise Time 1.7 10 ns td(off) Turn-Off Delay Time 5.4 11 ns tf Fall Time 2.3 10 ns Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 50 V, ID = 1.2 A 1.2 2 nC Qg(TOT) Total Gate Charge VGS = 0 V to 5 V0.6 1 nC Qgs Gate to Source Charge 0.4 nC Qgd Gate to Drain “Miller” Charge 0.4 nC VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 1.2 A (Note 2) 0.86 1.3 V trr Reverse Recovery Time IF = 1.2 A, di/dt = 100 A/μs 27 43 ns Qrr Reverse Recovery Charge 12 21 nC NOTES: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 1 A, VDD = 100 V, VGS = 10 V. 130 °C/W when mounted on a 1 in2 pad of 2 oz copper a) 180 °C/W when mounted on a minimum pad of 2 oz copper b) |
Podobny numer części - FDC8602 |
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Podobny opis - FDC8602 |
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