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FDC8886 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDC8886 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page January 2012 ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDC8886 Rev.C3 FDC8886 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 m Ω Features Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Application Primary Switch SuperSOTTM -6 G S D D D D Pin 1 1 2 3 6 5 4 D D G D D S MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage (Note 3) ±20 V ID Drain Current -Continuous (Package limited) TC = 25 °C 8.0 A -Continuous TA = 25 °C (Note 1a) 6.5 -Pulsed 25 PD Power Dissipation (Note 1a) 1.6 W Power Dissipation (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case 30 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 Device Marking Device Package Reel Size Tape Width Quantity .886 FDC8886 SSOT-6 7 ’’ 8 mm 3000 units |
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