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FDZ3N513ZT Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDZ3N513ZT
Szczegółowy opis  Integrated NMOS and Schottky Diode
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ3N513ZT Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
Electrical Characteristics T
J = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Schottky Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
47
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = +5 V/-0.3 V, VDS = 0 V
±10
μA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
0.5
0.7
1.5
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-1.6
mV/°C
rDS(on)
Drain to Source On Resistance
VGS = 4.5 V, ID = 0.3 A
384
462
m
Ω
VGS = 3.2 V, ID = 0.3 A
410
520
gFS
Forward Transconductance
VDS = 5 V, ID = 0.3 A
0.5
S
Ciss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
45
85
pF
Coss
Output Capacitance
45
85
pF
Crss
Reverse Transfer Capacitance
10
25
pF
Rg
Gate Resistance
2.0
Ω
td(on)
Turn-On Delay Time
VDD = 15 V, ID = 0.3 A
VGS = 5 V, RGEN = 6 Ω
3.1
10
ns
tr
Rise Time
1.9
10
ns
td(off)
Turn-Off Delay Time
9.6
20
ns
tf
Fall Time
2.7
10
ns
Qg
Total Gate Charge (VGS = 4.5 V)
VDD = 15 V
ID = 0.3 A
1.0
nC
Qgs
Gate to Source Gate Charge
0.1
nC
Qgd
Gate to Drain “Miller” Charge
0.3
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 0.3 A
(Note 2)
0.75
1.2
V
trr
Reverse Recovery Time
IF = 0.3 A, di/dt = 100 A/μs
16
29
ns
Qrr
Reverse Recovery Charge
6.0
10
nC
IR
Reverse Leakage
VR = 20 V
TJ = 25 °C
TJ = 85 °C
15
30
μA
300
μA
VF
Forward Voltage
IF = 300 mA
TJ = 25 °C
TJ = 85 °C
0.72
1.2
V
0.74
Notes:
1. RθJA is determined with the device mounted on a 1 in
2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
2. Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
a. 100 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.


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