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FDZ3N513ZT Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDZ3N513ZT Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page www.fairchildsemi.com 2 ©2010 Fairchild Semiconductor Corporation FDZ3N513ZT Rev. C Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Schottky Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C 47 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = +5 V/-0.3 V, VDS = 0 V ±10 μA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.5 0.7 1.5 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -1.6 mV/°C rDS(on) Drain to Source On Resistance VGS = 4.5 V, ID = 0.3 A 384 462 m Ω VGS = 3.2 V, ID = 0.3 A 410 520 gFS Forward Transconductance VDS = 5 V, ID = 0.3 A 0.5 S Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 45 85 pF Coss Output Capacitance 45 85 pF Crss Reverse Transfer Capacitance 10 25 pF Rg Gate Resistance 2.0 Ω td(on) Turn-On Delay Time VDD = 15 V, ID = 0.3 A VGS = 5 V, RGEN = 6 Ω 3.1 10 ns tr Rise Time 1.9 10 ns td(off) Turn-Off Delay Time 9.6 20 ns tf Fall Time 2.7 10 ns Qg Total Gate Charge (VGS = 4.5 V) VDD = 15 V ID = 0.3 A 1.0 nC Qgs Gate to Source Gate Charge 0.1 nC Qgd Gate to Drain “Miller” Charge 0.3 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 0.3 A (Note 2) 0.75 1.2 V trr Reverse Recovery Time IF = 0.3 A, di/dt = 100 A/μs 16 29 ns Qrr Reverse Recovery Charge 6.0 10 nC IR Reverse Leakage VR = 20 V TJ = 25 °C TJ = 85 °C 15 30 μA 300 μA VF Forward Voltage IF = 300 mA TJ = 25 °C TJ = 85 °C 0.72 1.2 V 0.74 Notes: 1. RθJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. a. 100 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 260 °C/W when mounted on a minimum pad of 2 oz copper. |
Podobny numer części - FDZ3N513ZT |
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Podobny opis - FDZ3N513ZT |
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