2N2329 datasheet(2/3 Pages) COMSET

Numer części	2N2329

Szczegółowy opis	SILICON THYRISTORS

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Producent	COMSET [Comset Semiconductor]

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2N2327 thur 2N2329

12/11/2012

COMSET SEMICONDUCTORS

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ELECTRICAL CHARACTERISTICS (*)

TJ=25°C unless otherwise noted, RGK=1000Ω

Symbol

Ratings

2N2327

2N2328

2N2329

Unit

VDRM

Peak Forward Blocking Voltage

(1)

Min :

250

300

400

V

IRRM

Peak Reverse Blocking Current

(Rated VDRM, TJ =125°C)

Max : 100

µA

IDRM

Peak Forward Blocking Current

(Rated VDRM, TJ =125°C)

Max : 100

µA

VT

Forward « on » Voltage

IT =1.0 A Peak

Max : 1.5

V

IT =1.0 A Peak

TC =85°C

Max : 2.0

IGT

Gate Trigger Current (2)

Anode Voltage=6.0 Vdc, RL=100Ω

Max : 200

µA

Anode Voltage=6.0 Vdc, RL=100Ω

TC=-65°C

Max : 350

VGT

Gate Trigger Voltage

Anode Voltage=6.0 V, RL=100Ω

Max : 0.8

V

Anode Voltage=6.0 V, RL=100Ω

TC=-65°C

Max : 1.0

VDRM = Rated, RL=100Ω

TJ=125°C

Min : 0.1

IH

Holding Current

Anode Voltage=6.0 V

Max : 2.0

mA

Anode Voltage=6.0 V

TC=-65°C

Max : 3.0

Anode Voltage=6.0 V

TC=125°C

Min : 0.15

(*) JEDEC Registered Values

(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring damage.

(2) RGK current is not included in measurement.

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