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2N2329 Arkusz danych(PDF) 2 Page - Comset Semiconductor |
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2N2329 Arkusz danych(HTML) 2 Page - Comset Semiconductor |
2 / 3 page 2N2327 thur 2N2329 12/11/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol Ratings 2N2327 2N2328 2N2329 Unit VDRM Peak Forward Blocking Voltage (1) Min : 250 300 400 V IRRM Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Max : 100 µA IDRM Peak Forward Blocking Current (Rated VDRM, TJ =125°C) Max : 100 µA VT Forward « on » Voltage IT =1.0 A Peak Max : 1.5 V IT =1.0 A Peak TC =85°C Max : 2.0 IGT Gate Trigger Current (2) Anode Voltage=6.0 Vdc, RL=100Ω Max : 200 µA Anode Voltage=6.0 Vdc, RL=100Ω TC=-65°C Max : 350 VGT Gate Trigger Voltage Anode Voltage=6.0 V, RL=100Ω Max : 0.8 V Anode Voltage=6.0 V, RL=100Ω TC=-65°C Max : 1.0 VDRM = Rated, RL=100Ω TJ=125°C Min : 0.1 IH Holding Current Anode Voltage=6.0 V Max : 2.0 mA Anode Voltage=6.0 V TC=-65°C Max : 3.0 Anode Voltage=6.0 V TC=125°C Min : 0.15 (*) JEDEC Registered Values (1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring damage. (2) RGK current is not included in measurement. |
Podobny numer części - 2N2329 |
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Podobny opis - 2N2329 |
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