2SJ665 datasheet(1/7 Pages) SANYO

Numer części	2SJ665

Szczegółowy opis	General-Purpose Switching Device Applications

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2SJ665

No.8590-1/7

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : TO-263-2L

10.0

5.3

1.27

0.8

2.54

0.254

4.5

8.0

1.3

0.5

12

3

4

Product & Package Information

• Package

: TO-263-2L

• JEITA, JEDEC

: SC-83, TO-263

• Minimum Packing Quantity : 800 pcs./reel

Packing Type: DL

Marking

Electrical Connection

Features

•

ON-resistance RDS(on)1=59mΩ(typ.)

•

Input capacitance Ciss=4200pF (typ.)

•

4V drive

Speciﬁcations

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--100

V

Gate-to-Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

--27

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--108

A

Allowable Power Dissipation

PD

Tc=25°C

65

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

48

mJ

Avalanche Current *2

IAV

--27

A

Note :

*1 VDD=--30V, L=100μH, IAV=--27A (Fig.1)

*2 L≤100μH, single pulse

Package Dimensions

unit : mm (typ)

7535-001

71112 TKIM TC-00002779/N1805QA MSIM TB-00001098

SANYO Semiconductors

DATA SHEET

2SJ665

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Ordering number : EN8590A

2SJ665-DL-1E

1

3

2, 4

J665

LOT No.

DL

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