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FDD8444L_F085 Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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FDD8444L_F085 Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDD8444L_F085 Rev A (W) www.fairchildsemi.com 3 Electrical Characteristics T J = 25 oC unless otherwise noted Switching Characteristics Drain-Source Diode Characteristics Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.37mH, IAS = 40A. Symbol Parameter Test Conditions Min Typ Max Units ton Turn-On Time VDD = 20V, ID = 50A VGS = 5V, RGS = 2Ω - - 104 ns td(on) Turn-On Delay Time - 18.7 - ns tr Turn-On Rise Time - 46 - ns td(off) Turn-Off Delay Time - 42 - ns tf Turn-Off Fall Time - 19.2 - ns toff Turn-Off Time - - 96 ns VSD Source to Drain Diode Voltage ISD = 50A - 0.9 1.25 V ISD = 25A - 0.8 1.0 trr Reverse Recovery Time IF = 50A, dIF/dt = 100A/µs -34 44 ns Qrr Reverse Recovery Charge - 29 38 nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. |
Podobny numer części - FDD8444L_F085_09 |
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Podobny opis - FDD8444L_F085_09 |
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