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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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OP184EP Arkusz danych(PDF) 4 Page - Analog Devices |
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OP184EP Arkusz danych(HTML) 4 Page - Analog Devices |
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4 / 20 page  REV. 0 –4– OP184/OP284/OP484 ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage “OP184/284E” Grade VOS (Note 1) 100 µV –40 °C ≤ T A ≤ +125°C 200 µV Offset Voltage “284F” Grade VOS 175 µV –40 °C ≤ T A ≤ +125°C 375 µV Offset Voltage “484E” Grade VOS 150 µV –40 °C ≤ T A ≤ +125°C 300 µV Offset Voltage “484F” Grade VOS 250 µV –40 °C ≤ T A ≤ +125°C 500 µV Input Bias Current IB 80 300 nA –40 °C ≤ T A ≤ +125°C 500 nA Input Offset Current IOS –40 °C ≤ T A ≤ +125°C50 nA Input Voltage Range –15 +15 V Common-Mode Rejection Ratio CMRR VCM = –14.0 V to +14.0 V, –40°C ≤ TA ≤ +125°C86 90 dB Common-Mode Rejection Ratio CMRR VCM = –15.0 V to +15.0 V 80 dB Large Signal Voltage Gain AVO RL = 2 k Ω, –10 V ≤ V O ≤ 10 V 150 1000 V/mV RL = 2 kΩ, –40°C ≤ TA ≤ +125°C 75 V/mV Offset Voltage Drift “E” Grade ∆V OS/ ∆T 0.2 2.00 µV/°C Bias Current Drift ∆I B/∆T 150 pA/ °C OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1.0 mA +14.8 V Output Voltage Low VOL IL = 1.0 mA –14.875 V Output Current IOUT ±10 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.0 V to ±18 V, –40°C ≤ T A ≤ +125°C90 dB Supply Current/Amplifier ISY VO = 0 V, –40 °C ≤ T A ≤ +125°C 1.75 mA Supply Current/Amplifier ISY VS = ± 18 V, –40°C ≤ TA ≤ +125°C 2.0 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 k Ω 2.4 4.0 V/ µs Full-Power Bandwidth BWp 1% Distortion, RL = 2 k Ω, V O = 29 V p-p 35 kHz Settling Time tS To 0.01%, 10 V Step 4 µs Gain Bandwidth Product GBP 4.25 MHz Phase Margin Øo 50 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.3 µV p-p Voltage Noise Density en f = 1 kHz 3.9 nV/ √Hz Current Noise Density in 0.4 pA/ √Hz NOTES 1Input Offset Voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. Specifications subject to change without notice. (@ VS = 15.0 V, VCM = 0 V, TA = +25 C unless otherwise noted) WAFER TEST LIMITS Parameter Symbol Conditions Limit Units Offset Voltage OP284 VOS 65 µV max Offset Voltage OP484 VOS 75 µV max Input Bias Current IB 300 nA max Input Offset Current IOS 50 nA max Input Voltage Range VCM V– to V+ V min Common-Mode Rejection Ratio CMRR VCM = +1 V to +4 V 86 dB min Power Supply Rejection Ratio PSRR VS = ± 2 V to ± 18 V 90 dB min Large Signal Voltage Gain AVO RL = 2 k Ω 50 V/mV min Output Voltage High VOH IL = 1.0 mA 4.85 V min Output Voltage Low VOL IL = 1.0 mA 125 mV max Supply Current/Amplifier ISY VO = 0 V, RL = ∞ 1.25 mA max NOTE Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. (@ VS = +5.0 V, VCM = 2.5 V, TA = +25 C unless otherwise noted) |
Podobny numer części - OP184EP |
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Podobny opis - OP184EP |
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