STP260N6F6 datasheet(4/14 Pages) STMICROELECTRONICS

Numer części	STP260N6F6

Szczegółowy opis	N-channel 60 V, 0.0024 廓, 120 A STripFET??VI DeepGATE??Power MOSFET in TO-220 and I짼PAK packages

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Electrical characteristics

STI260N6F6, STP260N6F6

4/14

Doc ID 17467 Rev 5

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS = 0)

ID = 250 µA

60

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = 60 V

1

µA

VDS = 60 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 60 A

2.4

3

m

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

-

11400

-

pF

Coss

Output capacitance

850

pF

Crss

Reverse transfer

capacitance

368

pF

Qg

Total gate charge

VDD = 30 V, ID = 120 A,

VGS = 10 V

(see Figure 14)

-

183

-

nC

Qgs

Gate-source charge

53

nC

Qgd

Gate-drain charge

41

nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD = 30 V, ID = 60 A

RG =4.7 Ω VGS = 10 V

(see Figure 13)

-

31.4

165

-

ns

td(off)

tf

Turn-off-delay time

Fall time

-

144.4

62.6

-

ns

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