ADVANCED

TECHNICAL

INFORMATION

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

GS

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 1mA)

MAXIMUM RATINGS

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

1000

13

0.860

25

250

±100

35

APT10086

1000

13

52

±30

±40

370

2.96

-55 to 150

300

13

30

1300

G

D

S

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

TO-247

N-Channel enhancement mode power MOSFETs. Lower gate charge is

achieved by optimizing the manufacturing process to minimize C

delivers exceptionally fast switching speeds.

• Lower Gate Charge & Capacitance

• Easier To Drive

• 100% Avalanche Tested

• Faster switching

USA

405 S.W. Columbia Street

Bend, Oregon 97702 -1035

Phone: (541) 382-8028

FAX: (541) 388-0364

EUROPE

Chemin de Magret

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

BLC

SLC

APT10086BLC

APT10086SLC

1000V 13A 0.860

W