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MMSF5N02HD Arkusz danych(PDF) 2 Page - Motorola, Inc |
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MMSF5N02HD Arkusz danych(HTML) 2 Page - Motorola, Inc |
2 / 10 page MMSF5N02HD 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 20 — — 41 — — Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — 0.02 — 1.0 10 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 1.0 — 1.5 4.0 2.0 — Vdc mV/ °C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc) (VGS = 4.5 Vdc, ID = 2.5 Adc) RDS(on) — — 0.0185 0.0219 0.025 0.040 Ohm Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc) gFS 3.0 12 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 1130 1582 pF Output Capacitance (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 464 650 Transfer Capacitance f = 1.0 MHz) Crss — 117 235 SWITCHING CHARACTERISTICS(2) Turn–On Delay Time (VDD = 10 Vdc, ID = 5.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω) td(on) — 15 30 ns Rise Time (VDD = 10 Vdc, ID = 5.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω) tr — 93 185 Turn–Off Delay Time VGS = 4.5 Vdc, RG = 6.0 Ω) td(off) — 35 70 Fall Time G = 6.0 Ω) tf — 40 80 Turn–On Delay Time (VDD = 10 Vdc, ID = 5.0 Adc, VGS = 10 Vdc, RG = 6.0 Ω) td(on) — 9.0 — Rise Time (VDD = 10 Vdc, ID = 5.0 Adc, VGS = 10 Vdc, RG = 6.0 Ω) tr — 53 — Turn–Off Delay Time VGS = 10 Vdc, RG = 6.0 Ω) td(off) — 56 — Fall Time G = 6.0 Ω) tf — 39 — Gate Charge See Figure 8 (VDS = 16 Vdc, ID = 5.0 Adc, VGS = 10 Vdc) QT — 30.3 43 nC See Figure 8 (VDS = 16 Vdc, ID = 5.0 Adc, VGS = 10 Vdc) Q1 — 3.0 — (VDS = 16 Vdc, ID = 5.0 Adc, VGS = 10 Vdc) Q2 — 7.5 — Q3 — 6.0 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(1) (IS = 5.0 Adc, VGS = 0 Vdc) (IS = 5.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.82 0.69 1.0 — Vdc Reverse Recovery Time See Figure 15 (IS = 5.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr — 32 — ns See Figure 15 (IS = 5.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta — 24 — (IS = 5.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb — 8.0 — Reverse Recovery Stored Charge QRR — 0.045 — µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
Podobny numer części - MMSF5N02HD |
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Podobny opis - MMSF5N02HD |
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