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ACE8628B Arkusz danych(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE8628B Arkusz danych(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 7 page ACE8628B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection VER 1.2 3 Note: A. The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B. Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient . D. The static characteristics are obtained using <300 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Typical Performance Characteristics |
Podobny numer części - ACE8628B |
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Podobny opis - ACE8628B |
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