FDC3601N datasheet(1/5 Pages) FAIRCHILD

Numer części	FDC3601N

Szczegółowy opis	Dual N-Channel 100V Specified PowerTrench MOSFET

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Producent	FAIRCHILD [Fairchild Semiconductor]

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August 2001

2001 Fairchild Semiconductor Corporation

FDC3601N Rev C(W)

FDC3601N

Dual N-Channel 100V Specified PowerTrenchMOSFET

General Description

These

N-Channel

100V

specified

MOSFETs

are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain low

gate charge for superior switching performance.

These devices have been designed to offer exceptional

power

dissipation

in

a

very

small

footprint

for

applications where the bigger more expensive SO-8

and TSSOP-8 packages are impractical.

Applications

• Load switch

• Battery protection

• Power management

Features

• 1.0 A, 100 V.

RDS(ON)= 500 m

Ω @ V

GS = 10 V

RDS(ON)= 550 m

Ω @ V

GS = 6.0 V

• Low gate charge (3.7nC typical)

• Fast switching speed.

• High performance trench technology for extremely

low R DS(ON) .

• SuperSOT

TM-6 package: small footprint 72%

(smaller than standard SO-8); low profile (1mm thick).

D1

S2

G1

D2

S1

G2

SuperSOT

-6

TM

3

2

1

4

5

6

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

100

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current

– Continuous

(Note 1a)

1.0

A

– Pulsed

4.0

Power Dissipation for Single Operation

(Note 1a)

0.96

(Note 1b)

0.9

PD

(Note 1c)

0.7

W

TJ, TSTG

Operating and Storage Junction Temperature Range

−55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

130

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

60

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.601

FDC3601N

7’’

8mm

3000 units

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