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FDC5614P Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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FDC5614P Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDC5614P Rev C1 (W) Typical Characteristics 0 3 6 9 12 15 012345 -VDS, DRAIN-SOURCE VOLTAGE (V) -6.0V -5.0V -4.5V -3.5V VGS = -10V -4.0V -2.5V -3.0V 0.8 1 1.2 1.4 1.6 1.8 024 68 10 -ID, DRAIN CURRENT (A) VGS = -3.5V -5.0V -6.0V -7.0V -8.0V -10V -4.5V -4.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -3.0A VGS = -10V 0 0.1 0.2 0.3 0.4 2468 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -1.5A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 3 6 9 12 15 1 234 5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = -5V 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Podobny numer części - FDC5614P |
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Podobny opis - FDC5614P |
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