BCP68T1G datasheet(3/4 Pages) ONSEMI

Numer części	BCP68T1G

Szczegółowy opis	NPN Silicon Epitaxial Transistor

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BCP68T1G, SBCP68T1G

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TYPICAL ELECTRICAL CHARACTERISTICS

1.0

1000

100

10

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltage

0.8

0.6

0.4

0.2

0

1.0

TJ = 25C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

VCE(sat) @ IC/IB = 10

80

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

0

70

60

50

40

30

1.0

2.0

3.0

4.0

TJ = 25C

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

0

5.0

10

15

20

TJ = 25C

25

20

15

10

5.0

1000

IC, COLLECTOR CURRENT (mA)

Figure 6. Base-Emitter Temperature Coefficient

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

100

10

1.0

0.8

0.6

0.4

0.2

0

100

IB, BASE CURRENT (mA)

10

1.0

0.1

0.01

TJ = 25C

I C = 10 mA

= 100 mA

= 500 mA

5.0

RqVB for VBE

= 50 mA

Figure 7. Saturation Region

= 1000 mA

Podobny numer części - BCP68T1G

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	BCP68T1G	106Kb / 4P	NPN Silicon Epitaxial Transistor November, 2011 ??Rev. 7
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	BCP68T1G	109Kb / 5P	NPN Silicon Epitaxial Transistor January, 2014 ??Rev. 9

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