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FDC6318P Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FDC6318P
Szczegółowy opis  Dual P-Channel 1.8V PowerTrench Specified MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC6318P Arkusz danych(HTML) 1 Page - Fairchild Semiconductor

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December 2001
2001 Fairchild Semiconductor Corporation
FDC6318P Rev D (W)
FDC6318P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
• Power management
• Load switch
Features
• –2.5 A, –12 V. RDS(ON) = 90 mΩ @ VGS = –4.5 V
RDS(ON) = 125 m
Ω @ VGS = –2.5 V
RDS(ON) = 200 m
Ω @ VGS = –1.8 V
• High performance trench technology for extremely
low R
DS(ON)
• SuperSOTTM-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D1
S2
G1
D2
S1
G2
SuperSOT
-6
TM
3
2
1
4
5
6
Absolute Maximum Ratings T
A=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–12
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current – Continuous
(Note 1a)
–2.5
A
– Pulsed
–7
Power Dissipation for Single Operation
(Note 1a)
0.96
(Note 1b)
0.9
PD
(Note 1c)
0.7
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.318
FDC6318P
13’’
12mm
3000 units


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